Specifications:
Model Number | WDS100T3B0E |
Interface | PCIe Gen4 NVMe 1.4b |
NAND Type | WDC TLC |
Performance | |
Sequential Read (MB/s) up to (Queues = 32, Threads = 1) |
4,150 |
Sequential Write (MB/s) up to (Queues = 32, Threads = 1) |
4,150 |
Random Read 4KB IOPS up to (Queues=32, Threads=16) |
600K |
Random Write 4KB IOPS up to (Queues=32, Threads=16) |
750K |
Endurance (TBW) | 600 |
Power | |
Average Active Power | 65mW |
Sleep (PS5) | 3.3mW |
Reliability | |
MTTF (hours) | 1.5M |
Security | TCG Pyrite 2.01; ATA Security Passthrough over NVMe |
Environmental | |
Operating Temperatures | 32°F to 185°F (0°C to 85°C) |
Non-operating Temperatures | -40°F to 185°F (-40°C to 85°C) |
Operating Vibration | 5.0 gRMS, 10–2000 Hz, 3 axes |
Non-Operating Vibration | 4.9 gRMS, 7–800 Hz, 3 axes |
Shock | 1,500G @ 0.5 ms half sine |
Certifications | BSMI, CAN ICES-3(B)/NMB-3(B), CE, FCC, KCC, Morocco, RCM, TUV, UL, VCCI |
Physical Dimensions | |
Form Factor | M.2 2280-S3-M (M key, Single Side Assembly) |
Length | 80 ± 0.15mm |
Width | 22 ± 0.15mm |
Height | 2.38mm |
Weight | 5.5g ±.5g |
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